Photoinduced interlayer diffusion ina-Ge/Se multilayers

We have studied photoinduced interlayer diffusion in a-Ge/Se multilayers by monitoring changes in the Raman spectra under the laser illumination required by the Raman measurement. We present a model that reproduces most of the observed changes to the Raman spectrum, and have been able to extract values for the photoinduced diffusion cross section for four of the intense ${\mathrm{Kr}}^{+}$ laser lines.