Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

This publication has 6 references indexed in Scilit:

• Submicron enhancement-mode AlGaN/GaN HEMTs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm
  Electronics Letters, 2002
• Trapping effects and microwave power performance in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices, 2001
• Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate
  Electronics Letters, 2000
• DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
  IEEE Electron Device Letters, 1998
• Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
  Applied Physics Letters, 1996