W-Re(6 wt.%) and W-Ti(10 wt.%) alloys as diffusion barriers between aluminium and silicon
- 1 October 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 205 (1) , 47-51
- https://doi.org/10.1016/0040-6090(91)90469-e
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- AES study of the interaction of Ni and Al overlayers with W-Ti and W-Re diffusion barriersPhysica Status Solidi (a), 1989
- Mechanisms for success or failure of diffusion barriers between aluminum and siliconJournal of Vacuum Science & Technology A, 1989
- Tungsten–rhenium alloys as diffusion barriers between aluminum and siliconJournal of Vacuum Science & Technology A, 1988
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- Application of Ti: W barrier metallization for integrated circuitsThin Solid Films, 1978