Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2
- 1 November 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4500-4503
- https://doi.org/10.1063/1.366183
Abstract
The temperature dependence of the photoluminescence spectra of has been studied between 10 and 120 K. From the analysis of the data, emissions due to free and bound excitons have been identified. The variation with of the free-exciton energy line is compared with the Manoogian–Woolley model for such a transition. An estimated value of the Debye temperature and the average phonon frequency are in good agreement with those reported from specific heat and reflectivity measurements, respectively. Using the existing theoretical models, binding and dissociation energy of excitons bound to ionized acceptors have been estimated. From the temperature dependence of the emission intensity of the bound exciton the activation energy is found to be This agrees quite well with the acceptor level of 15 meV reported in this compound.
This publication has 17 references indexed in Scilit:
- Temperature dependence of the fundamental absorption edge in CuInTe2Journal of Applied Physics, 1997
- Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze techniqueJournal of Crystal Growth, 1996
- On the Dielectric Constants of AIBIIIC Chalcopyrite Semiconductor CompoundsPhysica Status Solidi (b), 1995
- Electrical and optical properties of n- and p-type CuInTe2Physica Status Solidi (a), 1988
- Interband critical points of GaAs and their temperature dependencePhysical Review B, 1987
- On the electron effective mass in n-CuInTe2Physica Status Solidi (a), 1983
- Infrared reflectivity of-type CuInPhysical Review B, 1981
- Growth and Characterization of CuInTe2 Single CrystalsJapanese Journal of Applied Physics, 1980
- Transport Properties of Ternary CompoundsJapanese Journal of Applied Physics, 1980
- Debye temperature and standard entropies and enthalpies of compound semiconductors of the type I-III-VI2Journal of Electronic Materials, 1977