Generation of far-infrared radiation by hot holes in germanium and silicon inE ?H fields
- 1 January 1991
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 23 (2) , S221-S229
- https://doi.org/10.1007/bf00619769
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Remarkable effects of uniaxial stress on the far-infrared laser emission inp-type GePhysical Review B, 1988
- Evidence for induced far-infrared emission from p-Ge in crossed electric and magnetic fieldsApplied Physics Letters, 1985
- Far Infrared Absorption by Hot Holes in p‐Ge under E ⟂ B FieldsPhysica Status Solidi (b), 1985
- The experimental and theoretical investigation of the hot hole population inversion and far IR radiation generation in p-Ge under E ⊥ B fieldsPhysica B+C, 1983