In situ lateral growth control of optically efficient quantum structures

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Abstract
We present a versatile method for in situ lateral growth control of optically efficient quantum structures. The method is based on molecular-beam epitaxy through an epitaxial shadow mask. Lateral control is achieved by selective area growth of short period superlattices. We demonstrate how the method can be applied to both lattice-matched and unmatched material systems. In the former, selective growth is employed in the formation of quantum wires. In the latter, this growth concept was also successfully applied to control the self-assembly of quantum dots within selected areas. The excellent quality of the quantum structures is demonstrated by their bright cathodoluminescence at room temperature.