Bandlike and localized states at extended defects in silicon

We show that electronic states at extended defects in semiconductors can be classified as bandlike or localized using deep-level transient spectroscopy (DLTS), when electron equilibration at the defect is taken into account. We compare computer simulations of DLTS with data for 60° dislocations and for ${\mathrm{NiSi}}_2$ platelets in silicon and find narrow point defect clouds in the first and a two-dimensional metal or a metal ring in the second example.