Switching phenomena in thin-insulator metal-insulator-semiconductor diodes
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 407-408
- https://doi.org/10.1063/1.91923
Abstract
Switching phenomena with current‐control‐type negative resistance characteristics were observed in thin‐insulator metal‐insulator‐semiconductor diodes made on n‐type (100) silicon substrates. The characteristics except breakover point are reproducible and the diodes are also switched from a low‐conduction state into a high‐conduction state under a fixed‐bias condition by light stimulation from a commercial light‐emitting diode. One of the possible origins of this negative resistance is carrier multiplication by high‐energy electrons tunneled through the thin insulator and injected into the surface of the n‐type silicon substrate.Keywords
This publication has 1 reference indexed in Scilit:
- Transport processes of electrons in MNOS structuresJournal of Applied Physics, 1979