Cosmic Ray Induced Permanent Damage in MNOS EAROMs

1 January 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 31 (6) , 1568-1570
https://doi.org/10.1109/TNS.1984.4333551

Abstract

Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability of permanent damage depends on the system application.

Keywords

EPROM
READ-WRITE MEMORY
CYCLOTRONS
AEROSPACE TESTING
DISPLAYS
COUNTING CIRCUITS
TEMPERATURE
ANNEALING
SCANNING ELECTRON MICROSCOPY
ION BEAMS

This publication has 3 references indexed in Scilit:

Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device
IEEE Transactions on Nuclear Science, 1983
Cosmic-Ray-Induced Errors in MOS Devices
IEEE Transactions on Nuclear Science, 1980
Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer Memories
IEEE Transactions on Nuclear Science, 1979