The influence of surface treatment, ambient gas and temperature on the reverse characteristics of alloyed silicon p-n junctions
- 1 January 1965
- journal article
- Published by IOP Publishing in British Journal of Applied Physics
- Vol. 16 (1) , 45-56
- https://doi.org/10.1088/0508-3443/16/1/308
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Sperrkennlinien mit Oberflächendurchbruch von Silicium-p sp n-GleichrichternZeitschrift für Naturforschung A, 1960
- Über den Einbau von Mevalonsäure in das Ergolinsystem der Clavin-AlkaloideZeitschrift für Naturforschung B, 1960
- Effects of Certain Chemical Treatments and Ambient Atmospheres on Surface Properties of SiliconJournal of the Electrochemical Society, 1958
- Observations on the Growth of Excess Current in Germanium p-n JunctionsProceedings of the Physical Society. Section B, 1956
- Photon Emission from Avalanche Breakdown in SiliconPhysical Review B, 1956
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956
- Surface Properties of GermaniumBell System Technical Journal, 1953