Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12S)
- https://doi.org/10.1143/jjap.33.6993
Abstract
We study the resolution limit for dot patterns using a chemically amplified negative resist by the nanometer electron beam lithography system. It is confirmed that the substrates baked at 270° C after HMDS coating are suitable for fine resist dot patterning. In addition, the post exposure bake (PEB) dependencies of sensitivity and resolution are investigated. As a result, 20-nm-diameter dot resist patterns with a 30 nm height, and 35-nm-diameter dot resist patterns with a 50 nm height are fabricated on Si substrates.Keywords
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