Phonon limited intersubband lifetimes and linewidths in a two-dimensional electron gas
- 14 February 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 872-874
- https://doi.org/10.1063/1.110980
Abstract
Using an excited-state induced absorption spectroscopy technique, we have measured the lifetime of a state separated from the ground state by less than the optical phonon energy in a modulation-doped structure. A lifetime of τ=(300±100) ps is found in agreement with the prediction for the emission of an acoustic phonon. Moreover, we report the first direct evidence of a lifetime-broadened intersubband absorption line with a full width at half-maximum of 2.66 meV for a transition energy of E13=136 meV.Keywords
This publication has 12 references indexed in Scilit:
- Suppression of optical absorption by electric-field-induced quantum interference in coupled potential wellsPhysical Review Letters, 1993
- Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopyApplied Physics Letters, 1993
- Si dopant migration and the AlGaAs/GaAs inverted interfaceApplied Physics Letters, 1991
- Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wellsPhysical Review Letters, 1989
- High-efficiency TEM continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gainApplied Physics Letters, 1989
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987
- Time-resolved Raman scattering in GaAs quantum wellsPhysical Review Letters, 1987
- Band nonparabolicity effects in semiconductor quantum wellsPhysical Review B, 1987
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981