EPR studies of high-resistivity vanadium-doped GaAs and GaP
- 10 November 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (31) , L837-L841
- https://doi.org/10.1088/0022-3719/17/31/002
Abstract
Some preliminary results obtained by thermally detected EPR from high-resistivity vanadium-doped crystals of GaP and GaAs are reported. Very intense spectra are found in the as-received samples of GaP and similar spectra are produced by infrared radiation in the samples of GaAs. The magnetic centre responsible for at least some of the lines is found to have a set of ground state energy levels with three finite zero-field splittings in both cases. Is it a V2+ centre or something else? The authors' preliminary suggestion that it may be V2+ is in agreement with observations.Keywords
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