The Effects of Doping and Temperature on the Fermi Level and its Relationship to the Recrystallization Growth Velocity in Ion-Implanted Silicon
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electronic contribution to the recrystallization growth velocity asymmetry in doped siliconJournal of Applied Physics, 1985
- Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germaniumThin Solid Films, 1982
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivityApplied Physics Letters, 1980
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969