Absolute negative resistance in double-barrier heterostructures in a strong laser field
- 15 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (7) , 4193-4199
- https://doi.org/10.1103/physrevb.51.4193
Abstract
A tunneling current through a double-barrier heterostructure is considered in a strong laser field. By absorbing or emitting photons an electron can penetrate through the barrier structure. As shown, the current may have both positive and negative signs dependent on the intensity of the field. I-V characteristics have a peak structure with the peaks located by an energy of two photons apart from each other. The negative amplitude of the current demonstrates the effect of an absolute negative resistance. The I-V characteristics are studied at different temperatures because of a hot-electron-distribution Fermi function in the strong field. The expression for the tunneling current is generalized to asymmetric barriers, and to the case when the Fermi energy is larger than the energy of one photon as well.Keywords
This publication has 24 references indexed in Scilit:
- PHONON REPLICA IN THE I–V CHARACTERISTICS OF A GaAs/AlGaAs DOUBLE-BARRIER STRUCTUREInternational Journal of Modern Physics B, 1993
- Suppression of tunneling in periodically driven bistable systemsPhysica B: Condensed Matter, 1991
- Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applicationsIEEE Electron Device Letters, 1989
- I n s i t u thermal oxidation for surface cleaning and mask generation prior to selective area epitaxyApplied Physics Letters, 1988
- Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structuresApplied Physics Letters, 1987
- Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1985
- Helicoidal Structure and Spontaneous Polarization in the Mixtures of Ferroelectric Liquid Crystal with Its RacemateJapanese Journal of Applied Physics, 1985
- Resonant Fowler–Nordheim tunneling in n−GaAs-undoped AlxGa1−xAs-n+GaAs capacitorsApplied Physics Letters, 1984
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973