Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films
- 1 November 1994
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 65 (11) , 3501-3504
- https://doi.org/10.1063/1.1144528
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ultra-Dry Oxidation for Improving the Time-Dependent Dielectric Breakdown Lifetime of Ultra-Thin Silicon Oxide FilmsJapanese Journal of Applied Physics, 1992
- Correlations between stress-induced positive charges and time-dependent dielectric breakdown in ultrathin silicon oxide filmsApplied Physics Letters, 1991
- Chemistry of Si-SiO2 interface trap annealingJournal of Applied Physics, 1988
- Dynamic stress experiments for understanding hot-carrier degradation phenomenaIEEE Transactions on Electron Devices, 1988
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interfaceJournal of Applied Physics, 1985
- Relationship between trapped holes and interface states in MOS capacitorsApplied Physics Letters, 1980
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975
- Methods of surface studies depending on inelastic scattering of electronsVacuum, 1972