Determination of the barrier-height fluctuations based on the parallel-noninteracting diode model

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Abstract
A model is proposed to determine the barrier height fluctuations of the inhomogeneous Schottky junction from the experimental current–voltage (I–V) characteristics. This model is based on noninteracting parallel diodes. In it, the current of each diode responds to a general expression of the thermionic theory where the Schottky effect and the series resistance are enclosed. The barrier height fluctuations are an effective-area barrier-height distribution which is defined as the probability of occurrence of the barrier height for each diode. The model is applied to the experimental I–V curves reported by I. M. Dharmadasa et al., Solid-State Electronics 42, 595 (1998).