Random distribution of islands explains the oscillatory intensity in He/Si(111)-(7 × 7)
- 1 November 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 122 (3) , 535-540
- https://doi.org/10.1016/0039-6028(82)90101-7
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982
- The surface profile of charge of Si(111)(7×7) obtained with He scatteringSolid State Communications, 1981
- A consistent interpretation of the atomic and electronic structure of the Si(111)−7×7 surfaceSolid State Communications, 1981
- Structure of Si(111)-(7×7)HPhysical Review Letters, 1981
- Nature of the Si(111)7 × 7 reconstructionPhysical Review B, 1981
- Evaluation of recent Si(111)-(7 × 7) surface modelsSurface Science, 1981
- Atomic Displacements in the Si(111)-(7×7) SurfacePhysical Review Letters, 1980
- Atomic structure of Si(111) surfacesSurface Science, 1980
- An Investigation of the Si(111) 7×7 Surface Structure by RHEEDJapanese Journal of Applied Physics, 1980
- Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) SurfacePhysical Review Letters, 1980