Correlation of the decay of tunneling currents with trap generation inside thin oxides

This publication has 17 references indexed in Scilit:

• The superposition of transient low-level leakage currents in stressed silicon oxides
  Solid-State Electronics, 1995
• High field related thin oxide wearout and breakdown
  IEEE Transactions on Electron Devices, 1995
• The Transient Nature of Excess Low‐Level Leakage Currents in Thin Oxides
  Journal of the Electrochemical Society, 1995
• Bipolar stressing, breakdown, and trap generation in thin silicon oxides
  IEEE Transactions on Electron Devices, 1994
• A model relating wearout to breakdown in thin oxides
  IEEE Transactions on Electron Devices, 1994
• Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
  IEEE Transactions on Electron Devices, 1993
• The Impact of Si / SiO2 Interface Asperities on Breakdown Characteristics of Thin Gate Oxides
  Journal of the Electrochemical Society, 1992
• Time-dependent positive charge generation in very thin silicon oxide dielectrics
  Applied Physics Letters, 1992
• On the breakdown statistics of very thin SiO2 films
  Thin Solid Films, 1990
• Stress voltage polarity dependence of thermally grown thin gate oxide wearout
  IEEE Transactions on Electron Devices, 1988