Subpicosecond hot hole dynamics in highly excited GaAs

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Abstract
The buildup of band-edge gain is observed on a subpicosecond time scale in highly excited intrinsic GaAs. Using a kinetic model to fit the experimentally determined ‘‘gain time’’ at different wavelengths, the transient behavior of the optically injected hole temperature is determined. The data are not consistent with a simple decay of the hot hole temperature due to phonon emission processes. We show that a simple estimate of the energy transfer from electrons to holes via Coulomb scattering qualitatively accounts for the observed behavior of the hole temperature.