Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits
- 30 April 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (4) , 431-437
- https://doi.org/10.1016/0038-1101(95)00170-0
Abstract
No abstract availableKeywords
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