Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT's with 0.15- mu m T-shaped WSi/sub x/ gates

This publication has 15 references indexed in Scilit:

• Millimeter-wave noise parameters of high-performance HEMTs at 300 K and 17 K
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Ultralow-noise W-band pseudomorphic InGaAs HEMT's
  IEEE Electron Device Letters, 1990
• Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
  IEEE Transactions on Microwave Theory and Techniques, 1989
• Super low-noise HEMTs with a T-shaped WSi _x gate
  Electronics Letters, 1988
• Generation-recombination noise in the saturation regime of MODFET structures
  IEEE Transactions on Electron Devices, 1988
• Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters
  IEEE Transactions on Microwave Theory and Techniques, 1988
• Ultra-low-noise cryogenic high-electron-mobility transistors
  IEEE Transactions on Electron Devices, 1988
• FETs and HEMTs at cryogenic temperatures-their properties and use in low-noise amplifiers
  IEEE Transactions on Microwave Theory and Techniques, 1988
• A functional GaAs FET noise model
  IEEE Transactions on Electron Devices, 1981
• Thermal Noise in Field-Effect Transistors
  Proceedings of the IRE, 1962