Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 36 (4) , 745-751
- https://doi.org/10.1109/22.3580
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Microwave Noise Characterization of GaAs MESFET's: Evaluation by On-Wafer Low-Frequency Output Noise Current MeasurementIEEE Transactions on Microwave Theory and Techniques, 1987
- A DC TO 26.5 GHz Coaxial Test Fixture for MMICs and TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Changes of the four noise parameters due to general changes of linear two-port circuitsIEEE Transactions on Electron Devices, 1973
- Evaluation of equivalent external noise generators for passive networksInternational Journal of Electronics, 1970
- Noise Characterization of Linear Twoports in Terms of Invariant ParametersIEEE Journal of Solid-State Circuits, 1967
- Representation of Noise in Linear TwoportsProceedings of the IRE, 1960
- Circuit Theory of Linear Noisy NetworksPublished by MIT Press ,1959
- Theory of Noisy FourpolesProceedings of the IRE, 1956