Microwave Noise Characterization of GaAs MESFET's: Evaluation by On-Wafer Low-Frequency Output Noise Current Measurement

This publication has 14 references indexed in Scilit:

• Detection of avalanching in submicrometer field-effect devices
  IEEE Electron Device Letters, 1987
• A wideband monolithic GaAs IC amplifier
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Noise modeling in submicrometer-gate FET's
  IEEE Transactions on Electron Devices, 1981
• Low-Noise Cooled GASFET Amplifiers
  IEEE Transactions on Microwave Theory and Techniques, 1980
• Super low-noise GaAs MESFET's with a deep-recess structure
  IEEE Transactions on Electron Devices, 1980
• Optimal noise figure of microwave GaAs MESFET's
  IEEE Transactions on Electron Devices, 1979
• Noise characteristics of gallium arsenide field-effect transistors
  IEEE Transactions on Electron Devices, 1974
• Thermal noise in junction-gate field-effect transistors
  IEEE Transactions on Electron Devices, 1966
• IRE Standards on Methods of Measuring Noise in Linear Twoports, 1959
  Proceedings of the IRE, 1960
• Theory of Noisy Fourpoles
  Proceedings of the IRE, 1956