Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
- 1 July 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (7B) , L721-723
- https://doi.org/10.1143/jjap.40.l721
Abstract
The drain current versus gate voltage characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) with a silicon quantum-dot (QD) layer floating gate have shown the unique hysteresis and current bumps which arise from the electron charging or discharging of the QDs with an average dot height of 5 nm. The drain current response to application of a single-pulse gate bias has revealed that the multiple-step charging of the QD layer occurs until single electron occupation at each QD is achieved.Keywords
This publication has 7 references indexed in Scilit:
- Quantum confinement effect in self-assembled, nanometer silicon dotsApplied Physics Letters, 1998
- Room temperature operation of a quantum-dot flash memoryIEEE Electron Device Letters, 1997
- Resonant tunneling through a self-assembled Si quantum dotApplied Physics Letters, 1997
- Single charge and confinement effects in nano-crystal memoriesApplied Physics Letters, 1996
- A silicon nanocrystals based memoryApplied Physics Letters, 1996
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor DepositionMRS Proceedings, 1996