Resonant tunneling through a self-assembled Si quantum dot

Nanometer-scale Si quantum dots have been spontaneously fabricated on ${\mathrm{SiO}}_{\mathrm{2}}$ by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/1 nm-${\mathrm{SiO}}_{\mathrm{2}}\mathrm{/a}$ single Si quantum dot/1 nm-${\mathrm{SiO}}_{\mathrm{2}}{\mathrm{/n}}^{+}-\mathrm{Si}\text{(100)}$ double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10.