Initial stages of oxidation of Ge(111)-c(2×8) studied by scanning tunneling microscopy
- 15 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (4) , 1817-1824
- https://doi.org/10.1103/physrevb.44.1817
Abstract
The reaction of oxygen with the Ge(111)-c(2×8) surface has been studied with use of a scanning tunneling microscope. Atomically resolved images of the same area before and after oxygen exposure reveal that, on a room-temperature surface, the primary nucleation sites are the boundaries between domains of different orientations of the c(2×8) reconstruction. Point defects and disordered adatom regions can also act as nucleation sites. The c(2×8) reconstructed terraces themselves and, unexpectedly, the step risers between terraces are found to be relatively unreactive. At elevated sample temperatures, the surface unreconstructs due to adatom mobility. At these elevated temperatures, the oxide nucleates homogeneously and pins the surface in a disordered adatom configuration. This suggests that facilitated oxidation at elevated sample temperatures is primarily due to degradation of the c(2×8) reconstruction. Spectroscopic data from I-V curves are also presented and compared with known electronic spectra.Keywords
This publication has 23 references indexed in Scilit:
- Successive oxidation stages of adatoms on the Si(111)7×7 surface observed with scanning tunneling microscopy and spectroscopyPhysical Review B, 1990
- Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopyThe Journal of Physical Chemistry, 1990
- Real-time observation of oxygen and hydrogen adsorption on silicon surfaces by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Initial stages of oxygen adsorption on Si(111): The stable statePhysical Review B, 1989
- Oxidation of Si(111)-(7×7) as studied by scanning tunneling microscopyPhysical Review B, 1988
- Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfacesJournal of Vacuum Science & Technology A, 1988
- Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surfacePhysical Review Letters, 1987
- Photoemission studies of the surface states and oxidation of group IV semiconductorsJournal of Vacuum Science and Technology, 1977
- Oxidation of silicon: New electron spectroscopy resultsSolid State Communications, 1976
- Oxidation of Clean Ge and Si SurfacesPhysical Review Letters, 1975