A 475-V high-voltage 6H-SiC lateral MOSFET

1 August 1999

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 20 (8) , 431-433
https://doi.org/10.1109/55.778167

Abstract

High-voltage lateral MOSFET's on 6H- and 4H-SiC have been fabricated with 400-475 V breakdown voltage using the RESURF principle. An MOS electron inversion layer mobility of about 50 cm/sup 2//V-s is obtained on 6H-SiC wafers. This mobility is high enough such that the specific on-resistance of the 6H-SiC MOSFET's (/spl sim/0.29-0.77 /spl Omega/-cm/sup 2/) is limited by the resistance of the drift layer, as desired. However, the implanted drift layer resistance is about ten times higher than expected for the implant dose used. Design and process changes are described to decrease the on-resistance and increase the breakdown voltage. For 4H-SiC, extremely low mobility was obtained, which prevents satisfactory device operation.

Keywords

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