The effect of annealing on the AC electrical properties of SiO/SnO2amorphous thin films
- 1 May 1987
- journal article
- physical electronics
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 62 (5) , 685-690
- https://doi.org/10.1080/00207218708921021
Abstract
AC electrical properties of unannealed and annealed amorphous SiO/SnO2 thin films having different compositions and thicknesses and prepared by vacuum evaporation at 2 x 10-6 torr are investigated. Measurements were taken over the frequency range 200 Hz-1 MHz. The density of localized states (N) before and after annealing for different compositions have been calculated. A decrease in N after annealing accounts for the behaviour of electrical characteristics and indicates the occurrence of some structural changes of the thin films.Keywords
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