Electronic processes in silicon nitride
- 15 October 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3278-3284
- https://doi.org/10.1063/1.339334
Abstract
Time, electric field, and temperature dependence of the flat-band voltage shift and steady-state contact-current versus contact-field characteristics in polycrystalline silicon-oxide-nitride-oxide-silicon structures subjected to high field stress have been studied in detail. Experimental data are compared with exact (numerical) solutions of the Arnett model [P. C. Arnett, J. Appl. Phys. 46, 5236 (1975)] for one-carrier (electron) transport in silicon nitride. It is shown that a simple field-assisted thermal ionization (Poole–Frenkel) detrapping mechanism cannot explain the experimental observations, leading to unphysical values for the attempt-to-escape frequency. An alternative model is proposed based on a thermally assisted tunneling detrapping mechanism. Trap density, effective capture cross section, ground-state energy, and an upper limit for the energy of the first excited state of the electron trap are determined.This publication has 16 references indexed in Scilit:
- Charge transport and trapping in silicon nitride-silicon dioxide dielectric double layersJournal of Applied Physics, 1985
- Optimized Extraction of MOS Model ParametersIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1982
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982
- Degradation properties in metal-nitride-oxide-semiconductor structuresJournal of Applied Physics, 1981
- A review of recent experiments pertaining to hole transport in Si3N4IEEE Transactions on Electron Devices, 1978
- Transient conduction in insulators at high fieldsJournal of Applied Physics, 1975
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Trap-assisted charge injection in MNOS structuresJournal of Applied Physics, 1973
- Derivative free analogues of the Levenberg-Marquardt and Gauss algorithms for nonlinear least squares approximationNumerische Mathematik, 1971
- Poole-Frenkel conduction in amorphous solidsPhilosophical Magazine, 1971