Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (2) , 221-227
- https://doi.org/10.1109/16.277375
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Hot-carrier current modeling and device degradation in surface-channel p-MOSFETsIEEE Transactions on Electron Devices, 1990
- An accurate model of subbreakdown due to band-to-band tunneling and some applicationsIEEE Transactions on Electron Devices, 1990
- A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1986
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- Thermionic-field emission from interface states at grain boundaries in siliconJournal of Applied Physics, 1984
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972