An accurate model of subbreakdown due to band-to-band tunneling and some applications
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1) , 290-296
- https://doi.org/10.1109/16.43828
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- An accurate model of subbreakdown due to band-to-band tunneling and its applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Charge Losses of N-Doped Trench CellsJapanese Journal of Applied Physics, 1988
- Band-to-band tunneling and thermal generation gate-induced drain leakageIEEE Transactions on Electron Devices, 1988
- Subbreakdown drain leakage current in MOSFETIEEE Electron Device Letters, 1987
- The impact of gate-induced drain leakage current on MOSFET scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Corner-field induced drain leakage in thin oxide MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A high density floating-gate EEPROM cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960