Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs

This publication has 33 references indexed in Scilit:

• Recovery of threshold voltage after hot-carrier stressing
  IEEE Transactions on Electron Devices, 1988
• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Hot-carrier-induced MOSFET degradation under AC stress
  IEEE Electron Device Letters, 1987
• Dynamic channel hot-carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide
  IEEE Electron Device Letters, 1987
• Quasi-static simulation of hot-electron-induced MOSFET degradation under AC (pulse) stress
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress
  IEEE Electron Device Letters, 1986
• The case of AC stress in the hot-carrier effect
  IEEE Transactions on Electron Devices, 1986
• Dependence of channel electric field on device scaling
  IEEE Electron Device Letters, 1985
• Hot-electron and hole-emission effects in short n-channel MOSFET's
  IEEE Transactions on Electron Devices, 1985
• A simple method to characterize substrate current in MOSFET's
  IEEE Electron Device Letters, 1984