Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- ICl/Ar electron cyclotron resonance plasma etching of III–V nitridesApplied Physics Letters, 1996
- Inductively coupled plasma etching of GaNApplied Physics Letters, 1996
- Patterning of AlN, InN, and GaN in KOH-based solutionsJournal of Vacuum Science & Technology A, 1996
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- Determination of the dislocation densities in GaN on c-oriented sapphireMRS Internet Journal of Nitride Semiconductor Research, 1996