Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation?
- 25 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (17) , 2357-2359
- https://doi.org/10.1063/1.110500
Abstract
Using near‐edge x‐ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si‐doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm−3) in molecular‐beam‐epitaxy‐grown samples, the number of such p‐type Si atoms is insufficient to account for the observed large reduction of free‐carriers.Keywords
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