Silicon doping of MBE-grown GaAs films
- 1 December 1983
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 32 (4) , 195-200
- https://doi.org/10.1007/bf00820260
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Electron scattering in heavily doped compensated polar semiconductorsPhysical Review B, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- Lateral uniformity in Sn- or Si-doped n-GaAs grown by molecular beam epitaxyJournal of Crystal Growth, 1981
- Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopantApplied Physics Letters, 1980
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980
- High quality Si-doped GaAs layers grown by molecular beam epitaxySurface Science, 1979
- Growth temperature dependence in molecular beam epitaxy of gallium arsenideJournal of Crystal Growth, 1978
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- Epitaxy of silicon doped gallium arsenide by molecular beam methodMetallurgical Transactions, 1971