Lateral uniformity in Sn- or Si-doped n-GaAs grown by molecular beam epitaxy
- 31 January 1981
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 51 (1) , 149-152
- https://doi.org/10.1016/0022-0248(81)90021-x
Abstract
No abstract availableKeywords
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- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975