A multi-wafer growth technique for GaAs vapor phase epitaxy using the AsCl3-Ga-N2 system with a horizontal reactor
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 171-175
- https://doi.org/10.1016/0022-0248(78)90430-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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