High quality Si-doped GaAs layers grown by molecular beam epitaxy
- 2 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 126-136
- https://doi.org/10.1016/0039-6028(79)90387-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxyJournal of Applied Physics, 1977
- Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1975
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxyApplied Physics Letters, 1974
- Electron Transport in GaAsPhysical Review B, 1971
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971
- Epitaxy of silicon doped gallium arsenide by molecular beam methodMetallurgical Transactions, 1971
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAsSolid-State Electronics, 1971
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965