Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
- 11 November 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (20) , 3819-3821
- https://doi.org/10.1063/1.1522133
Abstract
Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance–voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Å Be:GaN layer at the interface reduces these currents by three orders of magnitude.Keywords
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