Importance of heat flux for stable operation of submicron gallium arsenide field-effect transistors
- 1 October 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (7) , 4413-4419
- https://doi.org/10.1063/1.357335
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- New nonstationary velocity overshoot phenomenon in submicron gallium arsenide field-effect transistorsJournal of Applied Physics, 1994
- Observation of negative differential resistance in GaAs field-effect transistorsJournal of Applied Physics, 1991
- Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1990
- An assessment of approximate nonstationary charge transport models used for GaAs device modelingIEEE Transactions on Electron Devices, 1989
- Inverted-gate field-effect transistors: novel high-frequency structuresIEEE Transactions on Electron Devices, 1988
- Two-dimensional numerical simulation of short-gate-length gaAs MESFETs and application to the travelling gunn domain phenomenonInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1988
- Two-dimensional hot-electron models for short-gate-length GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985
- Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamicsJournal of Applied Physics, 1980
- A two-dimensional analysis of gallium arsenide junction field effect transistors with long and short channelsSolid-State Electronics, 1972