Two-dimensional numerical simulation of short-gate-length gaAs MESFETs and application to the travelling gunn domain phenomenon
- 1 March 1988
- journal article
- research article
- Published by Wiley in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Vol. 1 (1) , 19-30
- https://doi.org/10.1002/jnm.1660010105
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
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