Dark current analysis of InSb photodiodes
- 31 July 1984
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 24 (4) , 391-395
- https://doi.org/10.1016/0020-0891(84)90031-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunnelingApplied Physics Letters, 1980
- An investigation of inversion layer induced leakage current in abrupt p-n junctionsSolid-State Electronics, 1970
- Effects of Electrons and Holes on the Transition Layer Characteristics of Linearly Graded P-N JunctionsProceedings of the IRE, 1961
- Surface Leakage Current in Silicon Fused Junction DiodesProceedings of the IRE, 1957
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949