Comments on the calculation of the extended state electron mobility in amorphous silicon
- 30 April 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (1) , 11-14
- https://doi.org/10.1016/0038-1098(85)91022-1
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Extended-state mobility in hydrogenated amorphous siliconSolid State Communications, 1984
- Localized states in compensatedPhysical Review B, 1984
- The study of transport and related properties of amorphous silicon by transient experimentsJournal of Non-Crystalline Solids, 1983
- Comparison of fast transient response between crystal and amorphous silicon pin photodiodesJournal of Non-Crystalline Solids, 1983
- Conduction in a-Si:H studied by traveling wave techniqueJournal of Non-Crystalline Solids, 1983
- The reversal of drifting excess carriers in an amorphous silicon junctionPhilosophical Magazine Part B, 1983
- Reverse recovery properties of amorphous and crystalline Si-based pin diodesPhysica B+C, 1983
- The interpretation of drift mobility experiments on amorphous siliconPhilosophical Magazine Part B, 1983
- Electron drift mobility in hydrogenated a-SiApplied Physics Letters, 1980
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970