Incremental creep testing: Application to the plasticity of InP between 0.31 and 0.77 Tm
- 31 October 1991
- journal article
- Published by Elsevier in Acta Metallurgica et Materialia
- Vol. 39 (10) , 2361-2372
- https://doi.org/10.1016/0956-7151(91)90017-u
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Dislocation mobilities and low-temperature macroscopic plasticity of III-V compound semiconductorsPhilosophical Magazine A, 1990
- Analysis of generation and movement of dislocations in InP by a study of the deformation behaviourJournal of Crystal Growth, 1987
- Thermal activation of glide in InP single crystalsActa Metallurgica, 1987
- Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamicsRevue de Physique Appliquée, 1987
- Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformationRevue de Physique Appliquée, 1987
- Elimination of grown-in dislocations in In-doped liquid encapsulated Czochralski GaAsJournal of Crystal Growth, 1986
- Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystalsJournal of Crystal Growth, 1985
- Synthesis, crystal growth and characterization of InPJournal of Crystal Growth, 1983
- On the measurement of thermally activated slip parameters in tetrahedrally coordinated semiconductorsPhysica Status Solidi (a), 1982
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969