Dislocation mobilities and low-temperature macroscopic plasticity of III-V compound semiconductors
- 1 April 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 61 (4) , 673-683
- https://doi.org/10.1080/01418619008231941
Abstract
A model is proposed to account for the low-temperature features of the plastic deformation of III-V compounds and particularly GaAs: the different effect of doping on the yield stress below 150°C as well as the parabolic shape of the stress-strain curves. Cross-slip is analysed as a function of the ratio of individual mobilities of α and β 30° partials which comprise a screw dislocation. Consequences on dislocation multiplication and strain hardening are discussed as functions of electronic doping, stress and temperature range.Keywords
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