Plastic deformation of GaAs single crystals as a function of electronic doping I: Medium temperatures (150–650°C)

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Abstract
Plastic deformation of GaAs single crystals has been studied in the temperature range 20-650°C as a function of electronic doping, using different deformation techniques. In this paper, experiments conducted between 150°C and 650°C, using suitable pre-deformation conditions, are reported. The effects of electronic doping on macroscopic plasticity have been found to be consistent with dislocation velocity measurements for temperatures larger than 200°C. Activation Gibbs free energies were derived from activation volume measurements and found to be in reasonable agreement with activation energies of dislocation velocities. Observations of deformation substructures by transmission electron microscopy show that screw dislocations control the deformation at the lower temperatures.