Electronic surface states on the relaxed (111) surface of Ge
- 15 March 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (6) , 3236-3242
- https://doi.org/10.1103/physrevb.15.3236
Abstract
Self-consistent pseudopotentials are used to investigate the (111) surface of Ge. Using a relaxed surface, geometry comparisons are made with other calculational results for the Ge surface. In addition, the results for Ge are compared to recent calculations performed on the Si surface. Striking differences are found between Si and Ge for the dangling-bond energy dispersion curves and charge-density distributions. A generalized susceptibility calculation is performed for the Ge and Si surfaces. The results suggest a different reconstruction pattern for the two surfaces in only qualitative agreement with experiment.Keywords
This publication has 24 references indexed in Scilit:
- Atomic densities of states near Si (111) surfacesPhysical Review B, 1976
- Electronic structure of the (111) surface of semiconductorsPhysical Review B, 1975
- Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structuresPhysical Review B, 1975
- Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed SurfacesPhysical Review Letters, 1975
- Tight-binding calculations of (111) surface densities of states of Ge and GaAsSolid State Communications, 1975
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Two-dimensional excitonic insulators: Si and Ge (111) surfacesSolid State Communications, 1974
- New Method of Calculating Bulk and Surface States in Thin FilmsPhysical Review Letters, 1972
- Low energy electron diffraction studies on Ge and Na-covered GeSurface Science, 1967
- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963