Sublimation mechanisms of (100) and (111) CdTe
- 8 August 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (6) , 734-736
- https://doi.org/10.1063/1.112214
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Surface reconstructions of (001) CdTe and their role in the dynamics of evaporation and molecular-beam epitaxy growthJournal of Vacuum Science & Technology A, 1994
- Surface sublimation of zinc blende CdTeApplied Physics Letters, 1993
- RHEED studies of MBE growth mechanisms of CdTe and CdMnTeMaterials Science and Engineering: B, 1993
- (1̄1̄1̄) CdTe surface structure: A study by reflection high energy electron diffraction, x-ray photoelectron spectroscopy, and x-ray photoelectron diffractionJournal of Vacuum Science & Technology A, 1991
- Correlation of the Cd-to-Te ratio on CdTe surfaces with the surface structurePhysical Review B, 1991
- Langmuir-type evaporation of CdTe epilayersSemiconductor Science and Technology, 1990
- Atomic-layer epitaxy of (100) CdTe on GaAs substratesJournal of Crystal Growth, 1990
- Atomic-layer epitaxy of (111)CdTe on BaF2 substratesApplied Physics Letters, 1988
- The first observation of reflection high-energy electron diffraction intensity oscillations during the growth and sublimation of CdTeJournal of Vacuum Science & Technology A, 1987
- Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfacesApplied Physics Letters, 1986