Langmuir-type evaporation of CdTe epilayers
- 1 March 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (3) , 191-195
- https://doi.org/10.1088/0268-1242/5/3/001
Abstract
Langmuir-type evaporation of (100) oriented epilayers has been investigated. An activation energy of 1.98+or-0.18 eV for both Cd and Te2 desorption has been determined. A quantitative analysis of the excess Cd desorption in the beginning of the CdTe evaporation from initially stoichiometric CdTe has been carried out yielding an upper limit for the Cd deficit in the epilayer of 2-5%.Keywords
This publication has 11 references indexed in Scilit:
- Nucleation kinetics of molecular-beam epitaxially grown (001) ZnTe and CdTe surfacesJournal of Applied Physics, 1989
- Properties of undoped and Sb-doped CdTe surfaces prepared by conventional and photo-assisted molecular beam epitaxyJournal of Crystal Growth, 1989
- Dependence of the vacuum sublimation rate of CdTe upon crystallographic orientationApplied Physics Letters, 1988
- Growth mechanism in atomic layer epitaxy (III) reevaporation of Cd and Te from CdTe (111) surfaces and thick elemental deposits monitored by quadrupole-mass spectrometryCrystal Research and Technology, 1988
- The first observation of reflection high-energy electron diffraction intensity oscillations during the growth and sublimation of CdTeJournal of Vacuum Science & Technology A, 1987
- Laser photosublimation of compound semiconductorsJournal of Materials Research, 1987
- Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrateApplied Physics Letters, 1986
- Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfacesApplied Physics Letters, 1986
- Partial pressures and Gibbs free energy of formation for congruently subliming CdTe(c)Journal of Physics and Chemistry of Solids, 1964
- Mass spectrometric and Knudsen-cell vaporization studies of group 2B-6B compoundsTransactions of the Faraday Society, 1963